SOI上具有强约束结构的一、二维MMI器件

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416712

Yanzhe Tang, Yiling Sun, Wenhui Wang, Yaming Wu, Jianyi Yang, Xiaoqing Jiang

{"title":"SOI上具有强约束结构的一、二维MMI器件","authors":"Yanzhe Tang, Yiling Sun, Wenhui Wang, Yaming Wu, Jianyi Yang, Xiaoqing Jiang","doi":"10.1109/GROUP4.2004.1416712","DOIUrl":null,"url":null,"abstract":"One and two-dimensional MMI couplers with strong confinement on SOI were fabricated. Analysis shows that it has lower imbalance, wider bandwidth and better fabrication tolerance. A special process was proposed to eliminate the alignment error.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"One and two-dimensional MMI device with strong confinement structure on SOI\",\"authors\":\"Yanzhe Tang, Yiling Sun, Wenhui Wang, Yaming Wu, Jianyi Yang, Xiaoqing Jiang\",\"doi\":\"10.1109/GROUP4.2004.1416712\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"One and two-dimensional MMI couplers with strong confinement on SOI were fabricated. Analysis shows that it has lower imbalance, wider bandwidth and better fabrication tolerance. A special process was proposed to eliminate the alignment error.\",\"PeriodicalId\":299690,\"journal\":{\"name\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2004.1416712\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

制备了具有强约束SOI的一维和二维MMI耦合器。分析表明，该方法具有较低的不平衡、较宽的带宽和较好的制造公差。提出了一种消除对准误差的特殊方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

One and two-dimensional MMI device with strong confinement structure on SOI

One and two-dimensional MMI couplers with strong confinement on SOI were fabricated. Analysis shows that it has lower imbalance, wider bandwidth and better fabrication tolerance. A special process was proposed to eliminate the alignment error.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

First IEEE International Conference on Group IV Photonics, 2004.

自引率

0.00%

发文量