高温下亚微米mosfet的亚阈值到线性转变

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 1900-01-01 DOI:10.1109/ICCDCS.2000.869839

E. Gutiérrez-D., R. Murphy-A

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摘要

亚微米mosfet在亚阈值到线性过渡区域的操作和建模正成为一个关键问题，特别是对于需要在低电压下操作以减少热载子效应和退化的深亚微米或纳米器件。本文讨论了高温(200℃)操作对该过渡区域的影响。

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The subthreshold-to-linear transition in submicron MOSFETs at high temperature

The operation and modelling of submicron MOSFETs in the subthreshold-to-linear transition region is becoming a crucial issue, especially for deep-submicron or nanodevices that need to be operated at a low-voltages to reduce hot-carrier effects and degradation. The impact of high-temperature (200 C) operation in this transition region is discussed in this work.

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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