The threshold voltage model of a SOI-MOSFET on films with Gaussian profile

The analytical models for electric field and potential distributions are useful for a lot of SOI devices, like SOI-MOSFET, SOI-BJT, three-dimensional device, SOI sensors and the others. For example, they are necessary for establish the inversion or accumulation conditions for front and back interfaces. The paper refers to a one-dimensional analysis, both for partially and fully depleted devices on films with nonuniform doping. The goal of this paper is to obtain an accurate model for the field and the potential distribution in the SOI structures with Gaussian doping concentration of impurities in the film. The results have been used for threshold voltage deduction, but they represent a reference point in developing of new models for SOI-devices fabricated on Gaussian profile films. In the fully depleted films case, the depletion of the silicon substrate for gate voltages that entirely depleted the film was considered. The results were compared with PISCES numerical simulations and were in good agreement.