具有正反馈效应的a-InGaZnO TFT栅极驱动电路

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) Pub Date : 2018-11-01 DOI:10.1109/CAD-TFT.2018.8608053

Tengteng Lei, Congwei Liao, Jie Huang, Ying Wang, Shengdong Zhang

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引用次数: 1

摘要

提出了一种带有新型逆变器的a- ingazno TFT集成栅极驱动电路。逆变器具有从输出电极到上拉晶体管栅极的正反馈，用于抑制泄漏电流，增强上拉能力。与传统设计相比，所提出的栅极驱动器具有从−8 V扩展到+9 V的V移余量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An a-InGaZnO TFT Gate Driver Circuit with Positive Feedback Effect

An a-InGaZnO TFT integrated gate driver circuit with a new inverter is proposed. The inverter features positive feedback from the output electrode to the gate electrode of the pull-up transistor, for suppressing the leakage current and enhancing the pull-up ability. Compared with the conventional designs, the proposed gate driver exhibits extended Vth shift margin from −8 V to +9 V.

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2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)

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