Tsai-Ling Tsai, Jin-Fu Li, Chun-Lung Hsu, Chi-Tien Sun
{"title":"内存计算8T ram的测试","authors":"Tsai-Ling Tsai, Jin-Fu Li, Chun-Lung Hsu, Chi-Tien Sun","doi":"10.1109/DFT.2019.8875487","DOIUrl":null,"url":null,"abstract":"To cope with the memory wall of von-Neumann computing architecture, the in-memory-computing (IMC) architecture has been proposed. The IMC architecture embeds logic into the memory array to reduce the data transfer between the processor and memory. However, embedding logic into the memory array increases the test complexity. Various IMC static random access memories (SRAMs) were reported. In this paper, we propose test method for IMC 8T SRAMs with NAND, NOR, and XOR logic operations. The IMC 8T SRAMs should be tested in memory mode and computing mode. A March C-8 test algorithm is proposed to cover typical functional faults and process variation-induced faults of the IMC 8T SRAMs.","PeriodicalId":415648,"journal":{"name":"2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Testing of In-Memory-Computing 8T SRAMs\",\"authors\":\"Tsai-Ling Tsai, Jin-Fu Li, Chun-Lung Hsu, Chi-Tien Sun\",\"doi\":\"10.1109/DFT.2019.8875487\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To cope with the memory wall of von-Neumann computing architecture, the in-memory-computing (IMC) architecture has been proposed. The IMC architecture embeds logic into the memory array to reduce the data transfer between the processor and memory. However, embedding logic into the memory array increases the test complexity. Various IMC static random access memories (SRAMs) were reported. In this paper, we propose test method for IMC 8T SRAMs with NAND, NOR, and XOR logic operations. The IMC 8T SRAMs should be tested in memory mode and computing mode. A March C-8 test algorithm is proposed to cover typical functional faults and process variation-induced faults of the IMC 8T SRAMs.\",\"PeriodicalId\":415648,\"journal\":{\"name\":\"2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DFT.2019.8875487\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DFT.2019.8875487","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
To cope with the memory wall of von-Neumann computing architecture, the in-memory-computing (IMC) architecture has been proposed. The IMC architecture embeds logic into the memory array to reduce the data transfer between the processor and memory. However, embedding logic into the memory array increases the test complexity. Various IMC static random access memories (SRAMs) were reported. In this paper, we propose test method for IMC 8T SRAMs with NAND, NOR, and XOR logic operations. The IMC 8T SRAMs should be tested in memory mode and computing mode. A March C-8 test algorithm is proposed to cover typical functional faults and process variation-induced faults of the IMC 8T SRAMs.