可重构场效应晶体管中通道电阻效应的紧凑建模

2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) Pub Date : 2022-06-23 DOI:10.23919/mixdes55591.2022.9838216

C. Roemer, G. Darbandy, M. Schwarz, J. Trommer, M. Simon, A. Heinzig, T. Mikolajick, W. Weber, B. Iñíguez, A. Kloes

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引用次数: 0

摘要

可重构场效应晶体管带有一个额外的栅极触点，这给紧凑的建模带来了挑战。在这项工作中，为这些器件导出了一个封闭形式和基于物理的直流模型，该模型将肖特基势垒上的注入电流与部分非门控器件沟道段或长沟道器件的电阻效应相结合。通过与TCAD仿真和实测结果的比较，对模型进行了验证。

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Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors

Reconfigurable field-effect transistors come with an additional gate contact, which leads to challenges for compact modeling. In this work, a closed-form and physics-based DC model is derived for those devices, which combines the injection current over the Schottky barriers with the resistance-effects of partially ungated device channel segments or long channel devices. The model verification is done by comparing the results to TCAD simulations and measurements.

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2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)

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