J. Manceau, S. Bruyère, S. Jeannot, A. Sylvestre, P. Gonon
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Dielectric relaxation study in Tantalum Pentoxide capacitors
In this paper MIM (Metal-Insulator-Metal) Ta2O5 capacitor has been studied in term of dielectric relaxation over several thicknesses with a low frequency dielectric spectroscopy and current versus time measurement. A Maxwell-Wagner mechanism and resistance degradation has been identified. The resistance degradation follows the Space-Charge-Limited (SCL) theory. These two behaviours have the same activation energy and have been attributed to electrode polarisation mechanism created by mobile charges in the dielectric. Finally according to physical characterization the origin of these defects has been attributed to oxygen vacancies.
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