太赫兹应用的CMOS器件和电路

Z. Ahmad, W. Choi, N. Sharma, J. Zhang, Q. Zhong, D. Kim, Z. Chen, Y. Zhang, R. Han, D. Shim, S. Sankaran, E. Seok, C. Cao, C. Mao, R. Schueler, I. Medvedev, David John Lary, Hyun-Joo Nam, P. Raskin, F. Delucia, J. P. McMillan, C. Neese, I. Kim, I. Momson, P. Yellswarapu, S. Dong, B.-K. Kim
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引用次数: 9

摘要

CMOS技术和电路的最新进展使其成为实现功能强大且价格合理的太赫兹系统的替代方案。通过工艺和电路优化,应该可以产生有用的功率,并在CMOS中相干检测频率超过1THz的信号,以及非相干检测频率为40THz的信号。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Devices and circuits in CMOS for THz applications
Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.
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