M. Goto, K. Hagiwara, Y. Iguchi, H. Ohtake, T. Saraya, M. Kobayashi, E. Higurashi, H. Toshiyoshi, T. Hiramoto
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Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers
We report the first demonstration of three-dimensional (3D) integrated CMOS image sensors with pixel-parallel A/D converters (ADCs). Photodiode (PD) and inverter layers were directly bonded with the damascened Au electrodes to provide each pixel with in-pixel A/D conversion. We designed ADC with a pulse frequency output and fabricated a prototype sensor with 64 pixels. The developed sensor successfully captured video images and confirmed excellent linearity with a wide dynamic range of more than 80 dB, which showed feasibility of pixel-level 3D integration for high-performance CMOS image sensors.
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