在塑料薄膜衬底上制备高质量超导MgB2薄膜

T. Kato, S. Yata, Y. Adachi, Y. Yamada, S. Kubo, Y. Yamada, A. Matsushita
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引用次数: 0

摘要

利用聚酰亚胺薄膜等耐热塑料衬底的低温生长特性,研究了MgB2薄膜的制备方法。MgB2薄膜可以在低于300℃的温度下以相当好的超导性能生长。为了获得高质量的MgB2薄膜,即使在低温下,外延生长的想法是必不可少的,并且具有与MgB2相同晶格参数的六角形晶体结构的金属缓冲器先前已被证明是有效的。在这里,我们研究了一种双层金属缓冲Ti/Ag,用于生长具有良好结晶度的MgB2。然后我们澄清了这种缓冲液,每层50纳米厚,在环境温度下制造,对聚酰亚胺薄膜衬底有用。对MgB2/聚酰亚胺薄膜的变形性能进行了初步研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Preparation of High-quality Superconducting MgB2 Thin Films on Plastic Film Substrates
The preparation of MgB2 thin films, which can grow with fairly good superconducting properties at temperatures below 300°C, was examined on heat-resistant plastic substrates such as polyimide film, making use of this low-temperature growth characteristic. To obtain high-quality MgB2 films even at low temperatures, the idea of epitaxial growth is essential, and a metallic buffer with a hexagonal crystal structure of the same lattice parameter as that of MgB2 was previously proved to be effective for this purpose. Here, we have examined a double-layered metallic buffer Ti/Ag for growing MgB2 with good crystallinity. We then clarified that this buffer, each layer being 50 nm-thick and fabricated at an ambient temperature, is useful for polyimide film substrates. Preliminary results on the deformation properties of MgB2/polyimide films are also described.
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