辐射条件下应用OBT对CMOS晶体管v值漂移的影响:一个案例研究

P. Petrashin, W. Lancioni, Agustin Laprovitta, F. Dualibe, J. Castagnola
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引用次数: 0

摘要

在这项工作中,我们探索了基于振荡的测试(OBT)在辐射条件下测试基于OTA-C滤波器(运算跨导放大器-电容)的电路的能力。我们采用OTA作为测试的案例研究。通过故障仿真验证了该策略的有效性。众所周知,当将电路提交给辐射时,有几个参数在移动,例如载波的迁移率或阈值电压(VTH)。本文介绍了在环境辐射条件下进行电路测试的探索经验。我们的想法是在辐射相关的振荡参数下观察OBT的振荡条件,以便获得OBT技术的某些使用限制,以及其他一些有用的结论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Vth shifting in CMOS Transistors under radiation conditions when applying OBT: A case study
In this work, we explore the ability of Oscillation-Based Test (OBT) for testing OTA-C filters (Operational Transconductance Amplifier - Capacitor) based circuits under radiation conditions. We adopt an OTA as a case study for testing. The effectiveness of the strategy is qualified by means of fault simulation. It is known that there are several parameters moving when submitting a circuit to radiation, such as carrier's mobility or Threshold Voltage (VTH). This paper presents an exploring experience when trying to test a circuit under environmental radiation conditions. The idea is to observe the oscillation condition for OBT under a radiation-dependent oscillating parameter in order to obtain certain usage limits for the OBT technique, among some other useful conclusions.
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