The effect of photonic correction on the optical and photoelectric characteristics of the In4Se3, In4Тe3 and GaP epitaxial structures

Optimizing effect of pulsed laser radiation on the structure of the In4Se3 and In4Тe3 epitaxial layers obtained by liquid phase epitaxy was studied by SEM, AFM, and EDS techniques. Ordered quasi-periodic micro- and nanostructures were created on the samples by laser melting. When studying the transverse chips of the structures based on the In4Se3, it was found that laser treatment leads to the formation of both narrow band gap and wide band gap phases of the In – Se system in the epitaxial layer. The action of laser treatment leads to the inversion of the conductivity type and to the formation of the laser photosensitive surface-barrier structures, reduces the influence of recombination processes on the heteroboundary. Optical studies have shown the efficiency of controlled laser action on the structural-phase state of the In4Se3 and In4Тe3 layers and improving their optical characteristics and photosensitivity. An increase in the sensitivity of the FTO-GaP diode structure at the wavelength 254 nm, as well as in the entire spectral range is observed with the laser treatment action