基于0.15µm GaAs pHEMT工艺的26-38GHz超宽带平衡倍频器

Wen-Ye Liu, Tianxiang Wu, Tianyang Yan, Fan Yang, Yong Chen, Shunli Ma
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引用次数: 0

摘要

本文报道了一种26-38GHz平衡倍频器的分析与设计。平衡倍频器利用电路的特性消除奇次谐波。我们采用级联的两级放大器来增加输出功率,并采用基于变压器的磁耦合谐振器(MCR)匹配技术来扩大带宽。此外,变压器可以实现单端到差动的转换,而不会增加额外的功耗。该倍频器采用0.15µm GaAs pHEMT工艺设计。布局后仿真结果表明,在26-38GHz范围内输出功率大于10dBm,基谐波抑制大于15dbc。在5v供电时,直流功耗为23ma。芯片面积为0.75×1.55 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 26-38GHz Ultra-Wideband Balanced Frequency Doubler in 0.15µ m GaAs pHEMT Process
This paper reports the analysis and design of a 26-38GHz balanced frequency doubler. The balanced frequency doubler eliminates odd harmonics by using the characteristics of the circuit. We employ a cascade of two-stage amplifiers to increase output power, and a transformer-based magnetic-coupled resonator (MCR) matching technique to widen the bandwidth. Besides, the transformer can realize the single-ended to differential conversion without penalizing additional power consumption. The frequency doubler is designed in a 0.15 µm GaAs pHEMT process. Post-layout simulation results show that the output power is greater than 10dBm over 26-38GHz, and the fundamental-to-harmonic suppression is greater than 15 dBc. The DC power consumption is 23 mA at a 5-V supply. The chip area is 0.75×1.55 mm2.
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