基于cmos的VLSI专用集成电路(ASIC)传感器接口IC芯片的设计(未回顾)

K. Williams, H. Penn, T. Tarver, A. Odeh, Z. Xiao
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引用次数: 0

摘要

针对碳纳米管应变传感器接口电路的应用,设计、仿真和制作了一种基于cmos的专用集成电路。该ASIC由高性能运算放大器(OPA)、低通滤波器和12位双斜率模数转换器(ADC)组成。ADC包含积分器、比较器、计数器、锁存器和数字控制逻辑。设计了低通滤波器来去除传感器的噪声。ASIC有望与基于碳纳米管的应变传感器集成,形成应变检测系统。采用Tanner设计工具对混合信号集成电路进行设计和仿真,其中L-Edit用于电路布局,T-SPICE用于仿真。由于在MOSIS中制造2.2 mm × 2.2 mm芯片尺寸的限制,我们将12位ADC修改为ASIC中的4位ADC。经过布局和后期仿真,ASIC在2.2 mm × 2.2 mm的硅片上实现,并采用MOSIS提供的1.5 μ m混合信号CMOS工艺技术制造。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS-based VLSI design of a specific integrated circuit (ASIC) sensor interface IC chip (non-reviewed)
A CMOS-based application specific integrated circuit (ASIC) has been designed, simulated and fabricated for the application of carbon nanotube-based strain sensor interface circuit. The ASIC consists of high performance operational amplifier (OPA), low-pass filter, and 12-bit dual-slope analog-to-digital converter (ADC). The ADC contains an integrator, a comparator, a counter, latch, and digital control logic. The low-pass filter was designed to remove the noise from the sensor. The ASIC was expected to be integrated with a carbon nanotube- based strain sensor to form a strain detection system. The Tanner design tools were used for the design and simulation of the mixed-signal integrated circuit, where L-Edit was used for the layout of circuit and T-SPICE was used for the simulation. Because of the limitation of the 2.2 mm times 2.2 mm chip size for fabrication in MOSIS, we modified the 12-bit ADC into a 4-bit ADC in the ASIC for the fabrication. After layout and post-simulation, the ASIC has been implemented on a 2.2 mm times 2.2 mm silicon chip die and fabricated by using MOSIS AMI 1.5 mum mixed- signal CMOS process technology available through MOSIS.
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