超低导通电阻300v击穿电压下的超级3D MOSFET

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239933

J. Sakakibara, Y. Urakami, H. Yamaguchi

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引用次数: 1

摘要

对于300 V击穿电压以下的范围，我们已经提出了一种新的结构功率MOSFET，我们称之为超级3D MOSFET。在70 V击穿电压下，模拟的总比导通电阻为19 mohm。mm/sup 2/，低于R/sub / Si限值。在这项工作中，我们提出了击穿电压的结构设计，考虑了其三维角处的电场浓度。此外，我们还给出了实际样机制作的实验结果。导通电阻和击穿电压分别为27mohm。mm/sup 2/和49v。与传统的沟槽门控MOSFET相比，导通电阻大大降低。

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Ultra low on-resistance Super 3D MOSFET under 300 V breakdown voltage

For the range of under 300 V breakdown voltage, we have already proposed a new structural power MOSFET that we call Super 3D MOSFET. At 70 V breakdown voltage, the simulated total specific on-resistance was 19 mohm.mm/sup 2/, and below the R/sub on/ Si limit. In this work, we present the structural design for the breakdown voltage, taking the electric field concentration into consideration at its 3-dimensional corner. Furthermore, we present the experimental results for an actual prototype fabrication. The on-resistance and breakdown voltage are respectively 27 mohm.mm/sup 2/ and 49 V. This on-resistance is reduced drastically in comparison with the conventional trench-gated MOSFET.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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