6位6-GS/s 95mW背景校准闪存ADC,集成前置放大器和半速率比较器,采用32nm LP CMOS

F. Radice, M. Bruccoleri, M. Ganzerli, Giorgio Spelgatti, D. Sanzogni, M. Pozzoni, A. Mazzanti
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引用次数: 1

摘要

介绍了一种6位6-GS/s闪存ADC。提出单级积分器作为前置放大器驱动比较器。与单级电压放大器相比,积分器限制了增益带宽要求,从而降低了功耗和器件尺寸。比较器是交错和时钟在半速率,限制耗散由于较长的可用再生时间。前端的偏移量在后台连续校准。该ADC采用32nm低功耗CMOS技术实现,在从1GS/s到6GS/s的过程中,SNDR仅下降1.5dB。以奈奎斯特频率输入6GS/s时的ENOB为5.25,1V电源的功耗为95mW。对应的FoM为416fJ/conv。据作者所知,该转换器在具有4位以上有效分辨率的CMOS闪存adc中显示速度最高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 6-bit 6-GS/s 95mW background calibrated flash ADC with integrating preamplifiers and half-rate comparators in 32nm LP CMOS
A 6-bits 6-GS/s flash ADC is presented. Single-stage integrators are proposed as preamplifiers to drive the comparators. Compared to single-stage voltage amplifiers, integrators limit the gain-bandwidth requirements leading to lower power dissipation and smaller device size. Comparators are interleaved and clocked at half rate, limiting dissipation thanks to the longer available regeneration time. Offsets of the front-end are continuously calibrated in background. The ADC, realized in a 32nm Low Power CMOS technology proves a very robust operation with SNDR degradation of only 1.5dB going from 1GS/s to 6GS/s. ENOB at 6GS/s with Nyquist frequency input is 5.25 with power dissipation of 95mW from 1V supply. The corresponding FoM is 416fJ/conv. To the Authors knowledge the converter displays also the highest speed among CMOS flash ADCs with more than 4 effective bits of resolution.
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