{"title":"具有40%分数带宽的全模拟双向顺序GaN功率放大器","authors":"Jin Shao, R. Ma, K. Teo, S. Shinjo, K. Yamanaka","doi":"10.1109/IEEE-IWS.2015.7164561","DOIUrl":null,"url":null,"abstract":"In this paper, we report a two-way sequential power amplifier (SPA) using GaN HEMTs. The proposed fully analog SPA delivers Psat of approximately 40dBm over 2-3 GHz covering 40% fractional bandwidth. The design consists of a 3dB input coupler, a main amplifier, a peak amplifier, and a 10dB output coupler for power combining. After proper designing and optimizing these critical wideband couplers in terms of both phase and amplitude alignment, the measured final SPA shows 45% to 61% drain efficiency (DE) at 35dBm (5dB backoff) output from 2.1 to 2.9 GHz under CW stimulus. A complete set of SPA with analog RF input and output network is demonstrated.","PeriodicalId":164534,"journal":{"name":"2015 IEEE International Wireless Symposium (IWS 2015)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A fully analog two-way sequential GaN power amplifier with 40% fractional bandwidth\",\"authors\":\"Jin Shao, R. Ma, K. Teo, S. Shinjo, K. Yamanaka\",\"doi\":\"10.1109/IEEE-IWS.2015.7164561\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report a two-way sequential power amplifier (SPA) using GaN HEMTs. The proposed fully analog SPA delivers Psat of approximately 40dBm over 2-3 GHz covering 40% fractional bandwidth. The design consists of a 3dB input coupler, a main amplifier, a peak amplifier, and a 10dB output coupler for power combining. After proper designing and optimizing these critical wideband couplers in terms of both phase and amplitude alignment, the measured final SPA shows 45% to 61% drain efficiency (DE) at 35dBm (5dB backoff) output from 2.1 to 2.9 GHz under CW stimulus. A complete set of SPA with analog RF input and output network is demonstrated.\",\"PeriodicalId\":164534,\"journal\":{\"name\":\"2015 IEEE International Wireless Symposium (IWS 2015)\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Wireless Symposium (IWS 2015)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2015.7164561\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Wireless Symposium (IWS 2015)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2015.7164561","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fully analog two-way sequential GaN power amplifier with 40% fractional bandwidth
In this paper, we report a two-way sequential power amplifier (SPA) using GaN HEMTs. The proposed fully analog SPA delivers Psat of approximately 40dBm over 2-3 GHz covering 40% fractional bandwidth. The design consists of a 3dB input coupler, a main amplifier, a peak amplifier, and a 10dB output coupler for power combining. After proper designing and optimizing these critical wideband couplers in terms of both phase and amplitude alignment, the measured final SPA shows 45% to 61% drain efficiency (DE) at 35dBm (5dB backoff) output from 2.1 to 2.9 GHz under CW stimulus. A complete set of SPA with analog RF input and output network is demonstrated.
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