自由电子激光器中的边带

S. Riyopoulos, C. Tang
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引用次数: 0

摘要

利用正则形式理论研究了自由电子激光器的边带生长问题。在所有粒子的作用角变量中,得到了没有边带的精确的无扰动轨道。在无扰动轨道上对带边带的线性化Vlasov方程进行积分,得到边带增长,其中包括捕获和未捕获的粒子。结果表明,与FEL频率对称的上、下两个边带的增长率相反,且幅度相等。上下带的稳定性由dfo/dΩb的符号决定,即振荡量子的相对总体hΩb, Ωb =共振周围的弹跳频率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sidebands in free electron lasers
The problem of sideband growth in a free electron laser (FEL) is studied using canonical formalism. The exact unperturbed orbits, without sidebands, are obtained in action-angle variables for all particles. Integration of the linearized Vlasov equation with sidebands over the unperturbed orbits yields the sideband growth that includes both trapped and untrapped particles. It is found that the upper and lower sidebands that are symmetric about the FEL frequency have opposite growth rates, with equal magnitude. The stability of the upper or lower sidebands is determined by the sign of dfo/dΩb, i.e., the relative population of oscillation quanta hΩb, Ωb = bounce frequency around resonance.
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