O2等离子体处理对后通道蚀刻a-IGZO tft性能的改善

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) Pub Date : 2018-11-01 DOI:10.1109/CAD-TFT.2018.8608051

Huan Yang, Xiaoliang Zhou, Shengdong Zhang, Gongtan Li, Shan Li

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引用次数: 0

摘要

本文研究了氧等离子体处理对后通道蚀刻(BCE) a-IGZO TFT性能的影响。结果表明，O2等离子体处理显著改善了阈下摆幅(SS)和负栅偏置应力下的性能稳定性。结果表明，这主要是由于铟的减少和后沟道表面缺陷状态的改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance Improvement of Back-Channel-Etched a-IGZO TFTs by O2 Plasma Treatment

This work investigates the effects of O2 plasma treatments on the performances of back-channel-etched (BCE) a-IGZO TFT. Results indicate that the O2 plasma treatment significantly improves the subthreshold swing (SS) and the performance stability under the negative gate bias stress. It is suggested that the improvement be attributed to the reduction of indium (In) and the defect state at the back channel surface.

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2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)

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