UV/臭氧辅助低温SnO2薄膜晶体管

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI:10.23919/AM-FPD.2018.8437388

Bongho Jang, Won-Yong Lee, Taegyun Kim, Sojeong Lee, Jaewon Jang

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引用次数: 0

摘要

我们报道了紫外(UV)臭氧后退火提高了溶胶-凝胶法制备的SnO2薄膜晶体管(TFTs)在300℃低温下的性能。经过两次UV臭氧后退火处理的SnO2 TFT的场效应迁移率为0.11 cm2/Vs，是未经UV臭氧处理的SnO2 TFT的场效应迁移率的40倍以上。此外，通/关电流比和亚阈值摆幅分别提高到1.83×105和2.09 V/dec。

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UV/ozone-process-assisted low-temperature SnO2 thin-film transistors

We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO2 thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C. The SnO2 TFT treated with UV ozone post-annealing (two times) shows a field-effect mobility of 0.11 cm²/Vs, which is more than 40 times higher than the field-effect mobility of SnO2 TFTs without UV ozone treatment. Further, the on/off current ratio and subthreshold swing improved to 1.83×10⁵ and 2.09 V/dec, respectively.

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2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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