高性能射频电感集成在先进的扇出晶圆级封装技术

C. Durand, F. Gianesello, R. Pilard, D. Gloria, Y. Imbs, R. Coffy, L. Marechal, Yonggang Jin, Y. Dodo
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引用次数: 9

摘要

本文旨在对集成在多层FO-WLP技术中的电感器性能进行全面评价。首先讨论了射频无源的技术利益。该电感器由四个不同的电感器家族组成,包括200多种不同的电感器。测量结果显示,这种封装技术的质量系数很有希望,对于1.1nH的电感,Q>;50。与集成在CMOS中的电感器相比,FO-WLP的质量因数提高了2.4倍,而整体尺寸几乎相同。因此,FO-WLP技术被认为是一种非常有前途的技术,用于集成高质量的CMOS无源器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High performance RF inductors integrated in advanced Fan-Out wafer level packaging technology
This paper aims to make a full evaluation of inductor performances integrated in multi layer FO-WLP technology. Technology interest for radio frequency passives is first discussed. The inductor offer, composed of four different inductor families, is described including more than 200 different inductors that were fabricated. Measurements exhibit promising quality factors for such packaging technology, with Q>;50 for a 1.1nH inductor. Comparison with inductors integrated in CMOS demonstrates a 2.4 times quality factor improvement in favor of FO-WLP while the global size is nearly identical. FO-WLP technology has then to be considered as a very promising technology for the integration of high quality passive in CMOS.
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