Yuichi Watanabe, Hirofumi Ikawa, Shota Suzuki, T. Isobe, Tatsuhiko Hirano, K. Sugai
{"title":"微观zeta电位测量方法的研究","authors":"Yuichi Watanabe, Hirofumi Ikawa, Shota Suzuki, T. Isobe, Tatsuhiko Hirano, K. Sugai","doi":"10.1109/ISSM51728.2020.9377533","DOIUrl":null,"url":null,"abstract":"A material removal rate in CMP process is affected by a frequency of contact between the abrasives and the wafer because of the electrostatic interaction. Control of ζpotential in a micro region was considered to be a key for slurry design, and research on its measurement method was conducted. FD curve was measured in liquid using AFM. As a result, it was found that load of the cantilever observed during the jump-in strongly reflects the ζpotential. Furthermore, we achieved to measure microscopic ζpotential on the patterned wafer.","PeriodicalId":270309,"journal":{"name":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on Measurement Method of Microscopic $\\\\zeta$ Potential\",\"authors\":\"Yuichi Watanabe, Hirofumi Ikawa, Shota Suzuki, T. Isobe, Tatsuhiko Hirano, K. Sugai\",\"doi\":\"10.1109/ISSM51728.2020.9377533\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A material removal rate in CMP process is affected by a frequency of contact between the abrasives and the wafer because of the electrostatic interaction. Control of ζpotential in a micro region was considered to be a key for slurry design, and research on its measurement method was conducted. FD curve was measured in liquid using AFM. As a result, it was found that load of the cantilever observed during the jump-in strongly reflects the ζpotential. Furthermore, we achieved to measure microscopic ζpotential on the patterned wafer.\",\"PeriodicalId\":270309,\"journal\":{\"name\":\"2020 International Symposium on Semiconductor Manufacturing (ISSM)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Symposium on Semiconductor Manufacturing (ISSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM51728.2020.9377533\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM51728.2020.9377533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study on Measurement Method of Microscopic $\zeta$ Potential
A material removal rate in CMP process is affected by a frequency of contact between the abrasives and the wafer because of the electrostatic interaction. Control of ζpotential in a micro region was considered to be a key for slurry design, and research on its measurement method was conducted. FD curve was measured in liquid using AFM. As a result, it was found that load of the cantilever observed during the jump-in strongly reflects the ζpotential. Furthermore, we achieved to measure microscopic ζpotential on the patterned wafer.