{"title":"Ar/ n2等离子溅射压力对HfN等离子体氧化形成的HfON隧穿层电特性的依赖","authors":"J. Pyo, H. Morita, A. Ihara, Ohmi Shun-ichiro","doi":"10.1109/ISSM51728.2020.9377520","DOIUrl":null,"url":null,"abstract":"This paper investigated Ar/N2-plasma sputtering pressure dependence on electrical characteristics of HfON tunneling layer (TL) formed by the plasma oxidation of HfN for Hf-based Metal-Oxide-Nitride-Oxide-Silicon (MONOS) diodes. The HfON formed by the Ar/O2 plasma oxidation of HfN deposited at 0.04 Pa showed improved film quality and small equivalent oxide thickness of 0.84 nm, which realized excellent MONOS characteristics such as negligible hysteresis, and memory window of 4 V at the program and erase voltage/time of ±8 V/100 ms. Moreover, HfON TL formed by Ar/O2 plasma oxidation of HfN deposited at 0.04 Pa MONOS diode shows improved endurance and retention characteristics.","PeriodicalId":270309,"journal":{"name":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ar/N2-plasma Sputtering Pressure Dependence on Electrical Characteristics of HfON Tunneling Layer Formed by the Plasma Oxidation of HfN for Hf-Based MONOS Diodes\",\"authors\":\"J. Pyo, H. Morita, A. Ihara, Ohmi Shun-ichiro\",\"doi\":\"10.1109/ISSM51728.2020.9377520\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigated Ar/N2-plasma sputtering pressure dependence on electrical characteristics of HfON tunneling layer (TL) formed by the plasma oxidation of HfN for Hf-based Metal-Oxide-Nitride-Oxide-Silicon (MONOS) diodes. The HfON formed by the Ar/O2 plasma oxidation of HfN deposited at 0.04 Pa showed improved film quality and small equivalent oxide thickness of 0.84 nm, which realized excellent MONOS characteristics such as negligible hysteresis, and memory window of 4 V at the program and erase voltage/time of ±8 V/100 ms. Moreover, HfON TL formed by Ar/O2 plasma oxidation of HfN deposited at 0.04 Pa MONOS diode shows improved endurance and retention characteristics.\",\"PeriodicalId\":270309,\"journal\":{\"name\":\"2020 International Symposium on Semiconductor Manufacturing (ISSM)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Symposium on Semiconductor Manufacturing (ISSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM51728.2020.9377520\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM51728.2020.9377520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ar/N2-plasma Sputtering Pressure Dependence on Electrical Characteristics of HfON Tunneling Layer Formed by the Plasma Oxidation of HfN for Hf-Based MONOS Diodes
This paper investigated Ar/N2-plasma sputtering pressure dependence on electrical characteristics of HfON tunneling layer (TL) formed by the plasma oxidation of HfN for Hf-based Metal-Oxide-Nitride-Oxide-Silicon (MONOS) diodes. The HfON formed by the Ar/O2 plasma oxidation of HfN deposited at 0.04 Pa showed improved film quality and small equivalent oxide thickness of 0.84 nm, which realized excellent MONOS characteristics such as negligible hysteresis, and memory window of 4 V at the program and erase voltage/time of ±8 V/100 ms. Moreover, HfON TL formed by Ar/O2 plasma oxidation of HfN deposited at 0.04 Pa MONOS diode shows improved endurance and retention characteristics.
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