采用硅碳源和漏极应力源的无间隔n沟道finfet的应变增强

ESSDERC 2007 - 37th European Solid State Device Research Conference Pub Date : 2007-09-01 DOI:10.1109/ESSDERC.2007.4430901

T. Liow, K. Tan, R.T.-P. Lee, M. Zhu, K. Hoe, G. Samudra, N. Balasubramanian, Y. Yeo

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引用次数: 1

摘要

通过去除带有硅碳源和漏极(S/D)应力源的n沟道finfet中的SiN栅极间隔片，扰乱了机械应力平衡。在移除间隔后，晶体管结构再次达到机械平衡后，可以实现更高的拉伸通道应力。这种应力增加导致在隔离片完好无损的情况下，与应变SiC S/D finfet相比，IDsat进一步提高了15%。峰值Gm提高了~ 33%。

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Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

By removing the SiN gate spacers in n-channel FinFETs with Silicon-Carbon (SiC) Source and Drain (S/D) stressors, the mechanical stress equilibrium is perturbed. Higher tensile channel stress can be achieved, after the transistor structure attains mechanical equilibrium once again after spacer removal. This stress increase results in up to ~15 % further IDsat enhancement over strained SiC S/D FinFETs with spacers intact. Peak Gm is enhanced by ~33 %.

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ESSDERC 2007 - 37th European Solid State Device Research Conference

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