30GHz-BW < -57dB-IM3的16nm FinFET直接射频接收器模拟前端

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830293

A. Ramkaj, Adalberto Cantoni, G. Manganaro, S. Devarajan, M. Steyaert, F. Tavernier

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引用次数: 2

摘要

本文提出了一种用于直接射频接收机的30ghz带宽模拟前端，该前端采用分布式0-11dB可变衰减的多段LC滤波器，以及一种新型推挽式源-退化混合放大器，后接推挽级联编码缓冲器。原型前端采用16nm FinFET实现< -57dB-IM3，支持2048-QAM，整个频段EVM/ACLR < 1.6%/< -48dB，功耗为210mW，表现出超越最先进的性能。

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A 30GHz-BW < -57dB-IM3 Direct RF Receiver Analog Front End in 16nm FinFET

This paper presents a 30GHz-bandwidth analog front end for a direct RF receiver, featuring a multi-segment LC filter with distributed 0-11dB variable attenuation, and a new push-pull source-degenerated hybrid amplifier followed by a push-pull cascoded buffer. Implemented in 16nm FinFET, the prototype front end achieves < -57dB-IM3 and supports 2048-QAM with < 1.6%/< -48dB EVM/ACLR in its entire band while consuming 210mW, demonstrating beyond state-of-the-art performance.

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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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