掺铒非晶硅量子点薄膜中1.54-/spl μ m Er发光的氢化效应

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416673

N. Park, Taeyoub Kim, Kyung‐Hyun Kim, G. Sung, K. Cho, J. Shin, B. Kim, Seong-Ju Park, Jung-Kun Lee, M. Nastasi

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引用次数: 0

摘要

加氢对Er发光的影响取决于点的大小，可以用加氢前的Er迁移和靠近Si点的Er离子的数量来解释。然而，要完全了解氢化效应还需要进一步的研究。

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Hydrogenation effect on 1.54-/spl mu/m Er luminescence in Er-doped amorphous silicon quantum dot films

The effect of hydrogenation on Er luminescence depending on the dot size could be explained by Er migration and the number of Er ions near a Si dot before hydrogenation. However, further studies will be needed to completely understand hydrogenation effect.

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First IEEE International Conference on Group IV Photonics, 2004.

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