硅垂直刻蚀制备的一维光子晶体结构具有较大的光学各向异性

Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003. Pub Date : 2003-06-29 DOI:10.1109/ICTON.2003.1264631

A.D. Remenyuk, E. Astrova, T. Perova, V. Tolmachev, J. Vij, A. Moore

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引用次数: 3

摘要

采用硅的液体各向异性刻蚀法制备了具有垂直壁的深窄槽周期性结构。实验表明，所得到的介质具有负单轴晶体的性质，其光轴位于晶圆平面内。介质在中红外光谱范围内具有巨大的光学各向异性。普通光线和特殊光线的有效折射率差/spl δ /n约为1,5。

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Large optical anisotropy in the structure of 1D photonic crystal fabricated by vertical etching of silicon

Periodic structures of deep narrow grooves with vertical walls were prepared by liquid anisotropic etching of silicon. It has been shown experimentally that the obtained media possess properties of negative uniaxial crystal whose optical axis lies in the wafer plane. The media has huge optical anisotropy in the middle IR spectral range. Difference in effective refractive indicies of the ordinary and the extraordinary rays /spl Delta/n is as about 1,5.

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Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.

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