120GHz全集成10Gb/s无线发射机,采用45nm低功耗CMOS片上天线

N. Deferm, Wouter Volkaerts, J. Osorio, A. D. Graauw, M. Steyaert, P. Reynaert
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引用次数: 10

摘要

本文提出了一种采用45nm低功耗CMOS实现片上偶极子键合线天线的全集成d波段发射机。片上频率产生对VCO牵拉不敏感,与直接载波正交矢量调制器、ASK调制器、4级差动变压器耦合功率放大器和天线集成在一起。数字基带电路也集成在同一芯片上。该芯片能够产生QPSK和Star-QAM调制格式。数据传输距离可达1米,数据速率高达2Gb/s。对于较短的距离,数据速率可达10Gb/s。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 120GHz fully integrated 10Gb/s wireless transmitter with on-chip antenna in 45nm low power CMOS
In this paper a fully integrated D-band transmitter with on-chip dipole bondwire antenna implemented in 45nm low power CMOS is presented. On-chip frequency generation, insensitive to VCO pulling, is integrated together with a direct carrier quadrature vector modulator, ASK modulator, 4-stage differential transformer-coupled power amplifier and antenna. Digital baseband circuits are also integrated on the same chip. The chip is capable of generating QPSK and Star-QAM modulation formats. Data transmission over a distance up to 1m is achieved for data rates as high as 2Gb/s. For shorter distances, data rates up to 10Gb/s are measured.
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