1 V 51GHz全集成压控振荡器，0.12 /spl mu/m CMOS

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.993051

M. Tiebout, H. Wohlmuth, W. Simburger

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引用次数: 22

摘要

完全集成的51 GHz压控振荡器采用0.12 /spl mu/m标准CMOS，具有6个金属电平。由于优化的高电感油箱，在1V电源下，核心功耗为1mw。调谐范围为1.4 GHz。测量相位噪声为-85 dBc/Hz，偏移量为1mhz。

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A 1 V 51GHz fully-integrated VCO in 0.12 /spl mu/m CMOS

A fully integrated 51 GHz VCO is implemented in 0.12 /spl mu/m standard CMOS with 6 metal levels. Core power consumption is 1 mW at 1V supply due to the optimized high-inductance tank. The tuning range is 1.4 GHz. Measured phase noise is -85 dBc/Hz at 1 MHz offset.

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2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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