S. Fukatsu, M. Jo, N. Yasuhara, Y. Sugawara, K. Kawamoto
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Electroluminescence and infrared gain in strained GaSb quantum dots in silicon
Compound semiconductor quantum dots (QDs) buried in Si have been developed as a new class of band-gap engineered Si-based QDs. It is demonstrated that the excellent optical properties of GaSb/Si QDs allow gain in the near-infrared.