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用于硅基光电子学的聚锗近红外探测器

Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003. Pub Date : 2003-06-29 DOI:10.1109/ICTON.2003.1263184
G. Masini, L. Colace, G. Assanto
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引用次数: 2

摘要

本文综述了锗硅技术在近红外光电探测器制造中的最新进展。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Poly-Ge near-infrared photodetectors for silicon based optoelectronics
In this paper we review the recent achievements of germanium on silicon technologies for the fabrication of near infrared photodetectors.
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Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.
Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.
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