CMOS射频电路无源器件建模

2021 28th International Conference on Mixed Design of Integrated Circuits and System Pub Date : 2021-06-24 DOI:10.23919/MIXDES52406.2021.9497635

José Valdés, R. Torres‐Torres, R. Murphy

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引用次数: 0

摘要

本文总结了我们在无源器件CMOS射频建模的两个重要方面的研究。这些方面与扩展频率范围内集成电感器的表示有关，最高可达60 GHz，以及关于共面波导的考虑，这是ic中最常见的互连类型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling Passive Devices for CMOS RF Circuits

Herein we present a summary of our research on two important aspects of CMOS RF modeling of passive devices. These aspects have to do with a representation of integrated inductors in an extended frequency range, up to 60 GHz, as well as consideration regarding coplanar waveguides, which are the most common type of interconnects in ICs.

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2021 28th International Conference on Mixed Design of Integrated Circuits and System

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