基于交叉PN结的10gbit /s硅调制器

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053701

M. Ziebell, D. Marris-Morini, G. Rasigade, P. Crozat, J. Fédéli, P. Grosse, E. Cassan, L. Vivien

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引用次数: 2

摘要

实验证明了基于交叉PN结的硅调制器集成在环形谐振器中，在10 Gbit/s速率下具有4 dB的消光比。

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10 Gbit/s silicon modulator based on interdigitated PN junctions

Silicon modulator based on interdigitated PN junctions integrated in a ring resonator is experimentally demonstrated, showing a 4 dB Extinction Ratio at 10 Gbit/s.

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8th IEEE International Conference on Group IV Photonics

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