一种用于RFID标签ic的差分阈值电压补偿RF-DC功率转换器

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-20 DOI:10.1109/INMMIC.2017.7927297

Lukas Zoscher, Peter Herkess, J. Grosinger, U. Muehlmann, Dominik Amschl, W. Bösch

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引用次数: 3

摘要

阈值电压(Vth)补偿技术的使用可以降低RF- dc功率转换器的输入质量因子，或者更具体地说，在低输入功率水平下降低RF电荷泵的输入质量因子，从而实现高灵敏度宽带UHF射频识别(RFID)应答器(标签)。在这项工作中，我们提出了一种利用栅极和体偏置相结合的v补偿方法，用于差分电荷泵的实现。采用所提出的v补偿技术的8级射频电荷泵的原型已经在低功耗40纳米CMOS技术中制造出来。测试电路的测量表明，在输出功率为4 w，直流电压水平为1 V时，功率转换效率高达42.7%，输入质量因子约为14。此外，我们将获得的测量结果与先前发表的两个射频电荷泵进行了比较。

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A differential threshold voltage compensated RF-DC power converter for RFID tag ICs

The usage of threshold voltage (Vth) compensation techniques allows to decrease the input quality factor of RF-DC power converters or more specifically RF charge pumps at low levels of input power, and thus enable the implementation of highly sensitive broadband UHF radiofrequency identification (RFID) transponders (tags). In this work, we present a Vth compensation approach using a combination of gate and bulk biasing for differential charge pump implementations. Prototypes of an eight stage RF charge pump using the proposed Vth compensation technique have been manufactured in a low power 40 nm CMOS technology. Measurements of the test circuits reveal a high power conversion efficiency of 42.7 % and a low input quality factor of approximately 14, at an output power of 4 ßW and a DC voltage level of 1 V. Furthermore, we compare the obtained measurement results with two previously published RF charge pumps.

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来源期刊

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)

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