SiGe HBT紧凑型电路设计

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2012-03-01 DOI:10.1109/SIRF.2012.6160171

M. Schroter, S. Chaudhry, J. Zheng, A. Mukherjee, A. Pawlak, S. Lehmann

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引用次数: 5

摘要

BJT/HBT紧凑型晶体管模型HICUM已在工业中用于生产型电路设计5年。本文简要介绍了该模型的基本工作原理，并简要介绍了其在铸造工艺设计套件和相应产品应用中的可用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SiGe HBT compact modeling for production-type circuit design

The BJT/HBT compact transistor model HICUM has been used for may years in the industry for production-type circuit design. This paper presents the basic operating principles of the model in a nutshell and then provides a concise overview on its availability in foundry process design kits and corresponding product applications.

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2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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