具有肖特基隧道源极和漏极的新型石墨烯沟道场效应晶体管

ESSDERC 2007 - 37th European Solid State Device Research Conference Pub Date : 2007-09-01 DOI:10.1109/ESSDERC.2007.4430923

Jing Zhu, J. Woo

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引用次数: 14

摘要

本文提出了一种高掺杂硅源极/漏极石墨烯沟道场效应管的新概念。通过数值分析和器件仿真，分析了电流-电压特性，给出了优化设计参数。这种新型的石墨烯沟道mosfet在FDSOI或绝缘体上具有比硅mosfet更好的电流驱动和跨导性。

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A novel graphene channel field effect transistor with Schottky tunneling source and drain

In this paper, a novel concept of graphene channel FET with highly doped silicon source/drain is proposed. The current-voltage characteristics are analyzed and the optimized design parameters are presented by numerical analysis and device simulation. Such novel graphene channel MOSFETs on FDSOI or on insulator are found to have much superior current drive and transconductance than silicon MOSFETs.

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ESSDERC 2007 - 37th European Solid State Device Research Conference

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