{"title":"1.3 μ m InGaAsP/InP BH-VPR半导体激光器的偏振频率响应","authors":"B.M. Yu, J.M. Liu, J. Lacourse","doi":"10.1109/ICIPRM.1990.203026","DOIUrl":null,"url":null,"abstract":"Frequency responses of 1.3- mu m InGaAsP/InP semiconductor lasers emitting in both transverse-electric and transverse-magnetic polarizations have been measured. It is found that lasers with different polarization-dependent power-versus-current characteristics show different polarization-dependent frequency responses. A polarization-dependent rate-equation model has been used with small-signal analysis to simulate the observations. The relative modulation bandwidths and the low-frequency modulation of the two polarizations can be explained. This model does not fit well at high frequencies because of the parasitics.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polarization-dependent frequency responses of 1.3- mu m InGaAsP/InP BH-VPR semiconductor lasers\",\"authors\":\"B.M. Yu, J.M. Liu, J. Lacourse\",\"doi\":\"10.1109/ICIPRM.1990.203026\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Frequency responses of 1.3- mu m InGaAsP/InP semiconductor lasers emitting in both transverse-electric and transverse-magnetic polarizations have been measured. It is found that lasers with different polarization-dependent power-versus-current characteristics show different polarization-dependent frequency responses. A polarization-dependent rate-equation model has been used with small-signal analysis to simulate the observations. The relative modulation bandwidths and the low-frequency modulation of the two polarizations can be explained. This model does not fit well at high frequencies because of the parasitics.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203026\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
测量了在横向电极化和横向磁极化下发射的1.3 μ m InGaAsP/InP半导体激光器的频率响应。研究发现，具有不同极化相关功率电流特性的激光器具有不同的极化相关频率响应。利用偏振相关的速率方程模型和小信号分析来模拟观测结果。可以解释两种极化的相对调制带宽和低频调制。由于寄生效应的影响，该模型在高频处不太适合
Polarization-dependent frequency responses of 1.3- mu m InGaAsP/InP BH-VPR semiconductor lasers
Frequency responses of 1.3- mu m InGaAsP/InP semiconductor lasers emitting in both transverse-electric and transverse-magnetic polarizations have been measured. It is found that lasers with different polarization-dependent power-versus-current characteristics show different polarization-dependent frequency responses. A polarization-dependent rate-equation model has been used with small-signal analysis to simulate the observations. The relative modulation bandwidths and the low-frequency modulation of the two polarizations can be explained. This model does not fit well at high frequencies because of the parasitics.<>
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