逻辑非易失性存储器-来自内存的NVM解决方案

International Series on Advances in Solid State Electronics and Technology Pub Date : 2014-05-01 DOI:10.1142/8765

C. Hsu, Yuan-Tai Lin, E. Yang, R. Shen

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引用次数: 5

摘要

用于非易失性存储器(NVM)晶体管结构、物理和操作的半导体器件物理-描述用于一次性可编程(OTP)、多次可编程(MTP)、闪存和电可擦可编程只读存储器(EEPROM)的基本构建块电路，用于读出、编程和擦除存储器单元，如字行和位行驱动器、感测放大器、电荷泵、NVM的测试和可靠性NVM的IP规格。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Logic Non-Volatile Memory - The NVM Solutions from eMemory

Semiconductor Device Physics for the Non-Volatile Memory (NVM) Transistor Structures, Physics, and Operations - Described for the One Time Programmable (OTP), Multiple Times Programmable (MTP), Flash Memory, and Electrical Erasable Programmable Read Only Memory (EEPROM) The Basic Building Block Circuits to Read Out, Program, and Erase the Memory Cells, such as Wordline and Bitline Drivers, Sense Amplifiers, Charge Pumps, and Verify Circuitries The Testing and Reliability of NVM The IP Specifications of NVM.

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International Series on Advances in Solid State Electronics and Technology

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