{"title":"l波段GaAs FET放大器","authors":"L. Nevin, R. Wong","doi":"10.1109/EUMA.1978.332528","DOIUrl":null,"url":null,"abstract":"Low noise GaAs FET amplifier performance is enhanced at 1-2 GHz frequencies through the use of source inductance feedback. A simple circuit model predicts noise and signal performance and is used to derive matching circuits for the amplifier design. A 1-2 GHz single stage amplifier, designed on the basis of the modeled results, demonstrates <1.7dB noise figure, 15dB gain, and modest VSWR across the band. Over narrower band-widths, < ldB noise figure with 15dB of associated gain and <3:1 VSWR is demonstrated.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"L-Band GaAs FET Amplifier\",\"authors\":\"L. Nevin, R. Wong\",\"doi\":\"10.1109/EUMA.1978.332528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low noise GaAs FET amplifier performance is enhanced at 1-2 GHz frequencies through the use of source inductance feedback. A simple circuit model predicts noise and signal performance and is used to derive matching circuits for the amplifier design. A 1-2 GHz single stage amplifier, designed on the basis of the modeled results, demonstrates <1.7dB noise figure, 15dB gain, and modest VSWR across the band. Over narrower band-widths, < ldB noise figure with 15dB of associated gain and <3:1 VSWR is demonstrated.\",\"PeriodicalId\":429268,\"journal\":{\"name\":\"1978 8th European Microwave Conference\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 8th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1978.332528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 8th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1978.332528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low noise GaAs FET amplifier performance is enhanced at 1-2 GHz frequencies through the use of source inductance feedback. A simple circuit model predicts noise and signal performance and is used to derive matching circuits for the amplifier design. A 1-2 GHz single stage amplifier, designed on the basis of the modeled results, demonstrates <1.7dB noise figure, 15dB gain, and modest VSWR across the band. Over narrower band-widths, < ldB noise figure with 15dB of associated gain and <3:1 VSWR is demonstrated.
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