采用选择性润湿工艺对CVD-Al金属化工艺进行了改进

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219735

Jung Hun Seo, B. Kim, Jong Myeong Lee, H. Park, J. Yun, Youngseop Rah, G. Choi, U. Chung, J. Moon

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引用次数: 0

摘要

提出了一种基于选择性润湿层的新型屏障金属结构。该工艺以物理气相沉积(PVD) Ti作为共形化学气相沉积(CVD) Al层的控制层，具有良好的深小接触填充能力和良好的电学性能，并具有显著的表面形貌，可应用于金属触点和通孔填充等新型金属化工艺。

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The improved CVD-Al metallization for deep small contact filling using selective wetting process

The new barrier metal structure using selective wetting layer was proposed. This process using physical vapor deposition (PVD) Ti as the controlling layer for conformal chemical vapor deposition (CVD) Al layer shows an excellent filling capability for deep small contact and good electrical properties as well as the remarkable surface morphology, which can be applied for the new metallization process such as metal contacts and via holes filling.

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Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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