温度和电子束诱导氧化锆薄膜结晶从水介质沉积:透射电子显微镜研究

V. Roddatis, D. Su, F. Jentoft, R. Schlögl
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引用次数: 15

摘要

摘要采用透射电子显微镜和电子能量损失能谱研究了在水介质中自组装单层介质沉积制备的氧化锆薄膜。在低于525℃的温度下退火对薄膜结构没有影响。550℃退火导致结晶;非晶材料转变为ZrO2的四方相(t-ZrO2),产生由10-50nm大小的晶粒组成的多晶薄膜。在600℃退火后,除了检测到四方相外,还检测到一小部分单斜相。在生长膜和退火膜的能量色散x射线光谱中可见硫信号,退火后硫含量降低。电子束辐照还诱导生长膜中非晶材料的结晶生成t-ZrO2;在这种情况下,形成多晶薄膜的晶粒尺寸只有5-10纳米。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature- and electron-beam-induced crystallization of zirconia thin films deposited from an aqueous medium: A transmission electron microscopy study
Abstract Thin zirconia films prepared by self-assembled monolayer-mediated deposition from an aqueous medium were investigated by transmission electron microscopy and electron-energy-loss spectroscopy. As-grown films were amorphous, and annealing at temperatures below 525°C did not influence the film structure. Annealing at 550°C led to crystallization; amorphous material transformed into the tetragonal phase of ZrO2 (t-ZrO2), yielding a polycrystalline film consisting of 10–50nm sized grains. After annealing at 600°C, a small fraction of monoclinic phase was detected in addition to the tetragonal phase. Sulphur signals were visible in energy-dispersive X-ray spectra of as-grown and of annealed films, with a reduced sulphur content after annealing. Electron-beam irradiation also induced crystallization of amorphous material in as-grown films to give t-ZrO2; in this case the grains forming the polycrystalline film were only 5–10 nm in size.
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