基于本征半导体的辐射稳定固态器件

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869827

Y. Gurevich, I. Volovichev, V. Koshkin

{"title":"基于本征半导体的辐射稳定固态器件","authors":"Y. Gurevich, I. Volovichev, V. Koshkin","doi":"10.1109/ICCDCS.2000.869827","DOIUrl":null,"url":null,"abstract":"The perspective of use of radiation-stable semiconductor compounds with loose crystal structures for development of solid state devices is discussed. The theoretical possibility of creation of active electronic elements based on semiconductors of this type is shown. A feasible implementation of the solid-state amplifier on the basis of thin-film heterostructures of intrinsic semiconductors is suggested and its parameters are calculated.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Radiation-stable solid state devices based on intrinsic semiconductors\",\"authors\":\"Y. Gurevich, I. Volovichev, V. Koshkin\",\"doi\":\"10.1109/ICCDCS.2000.869827\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The perspective of use of radiation-stable semiconductor compounds with loose crystal structures for development of solid state devices is discussed. The theoretical possibility of creation of active electronic elements based on semiconductors of this type is shown. A feasible implementation of the solid-state amplifier on the basis of thin-film heterostructures of intrinsic semiconductors is suggested and its parameters are calculated.\",\"PeriodicalId\":301003,\"journal\":{\"name\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2000.869827\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2000.869827","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

讨论了具有松散晶体结构的辐射稳定半导体化合物在固态器件开发中的应用前景。在这种类型的半导体基础上创造有源电子元件的理论可能性被显示。提出了一种可行的基于本征半导体薄膜异质结构的固态放大器实现方案，并计算了其参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Radiation-stable solid state devices based on intrinsic semiconductors

The perspective of use of radiation-stable semiconductor compounds with loose crystal structures for development of solid state devices is discussed. The theoretical possibility of creation of active electronic elements based on semiconductors of this type is shown. A feasible implementation of the solid-state amplifier on the basis of thin-film heterostructures of intrinsic semiconductors is suggested and its parameters are calculated.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

自引率

0.00%

发文量