基于大容量存储器的FLASH数据记录与回放并行性研究

2009 International Conference on Computational Intelligence and Software Engineering Pub Date : 2009-12-28 DOI:10.1109/CISE.2009.5365890

Wei-gong Zhang, Qinglin Qiu, Jinye Rong, Yong-xiang Zhang

{"title":"基于大容量存储器的FLASH数据记录与回放并行性研究","authors":"Wei-gong Zhang, Qinglin Qiu, Jinye Rong, Yong-xiang Zhang","doi":"10.1109/CISE.2009.5365890","DOIUrl":null,"url":null,"abstract":"With the characteristics of mass memory and highspeed storing, the NAND FLASH have been widely accepted in the filed of date storage. However, due to the restrictions on use of it, the NAND FLASH can not realize the date storing and reading into operation at the same time, and the bad block may be generated when NAND FLASH under using. In this paper, a plan is proposed to solve the problems. The NAND FLASH and SRAM are used together to realize the data storing and reading working simultaneously, and the bad blocks of NAND FLASH can also be managed. Keywordsmass memory; data transmission; parallelism","PeriodicalId":135441,"journal":{"name":"2009 International Conference on Computational Intelligence and Software Engineering","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Research on Parallelism of Mass Memory Based FLASH Data Recording and Replay\",\"authors\":\"Wei-gong Zhang, Qinglin Qiu, Jinye Rong, Yong-xiang Zhang\",\"doi\":\"10.1109/CISE.2009.5365890\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the characteristics of mass memory and highspeed storing, the NAND FLASH have been widely accepted in the filed of date storage. However, due to the restrictions on use of it, the NAND FLASH can not realize the date storing and reading into operation at the same time, and the bad block may be generated when NAND FLASH under using. In this paper, a plan is proposed to solve the problems. The NAND FLASH and SRAM are used together to realize the data storing and reading working simultaneously, and the bad blocks of NAND FLASH can also be managed. Keywordsmass memory; data transmission; parallelism\",\"PeriodicalId\":135441,\"journal\":{\"name\":\"2009 International Conference on Computational Intelligence and Software Engineering\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Computational Intelligence and Software Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CISE.2009.5365890\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Computational Intelligence and Software Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CISE.2009.5365890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

NAND闪存具有大容量存储和高速存储的特点，在数据存储领域得到了广泛的应用。然而，由于使用限制，NAND FLASH不能同时实现数据的存储和读取，在使用过程中可能会产生坏块。本文提出了解决这些问题的方案。将NAND FLASH与SRAM结合使用，实现了数据的存储和读取同时进行，并对NAND FLASH的坏块进行了管理。Keywordsmass记忆;数据传输;并行性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Research on Parallelism of Mass Memory Based FLASH Data Recording and Replay

With the characteristics of mass memory and highspeed storing, the NAND FLASH have been widely accepted in the filed of date storage. However, due to the restrictions on use of it, the NAND FLASH can not realize the date storing and reading into operation at the same time, and the bad block may be generated when NAND FLASH under using. In this paper, a plan is proposed to solve the problems. The NAND FLASH and SRAM are used together to realize the data storing and reading working simultaneously, and the bad blocks of NAND FLASH can also be managed. Keywordsmass memory; data transmission; parallelism

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 International Conference on Computational Intelligence and Software Engineering

自引率

0.00%

发文量