2. MBE的生长与制备Xμm InGa(As)Sb/AlGaAsSb激光器

Photonics Asia Pub Date : 2014-11-21 DOI:10.1117/12.2071640

Yu Zhang, Yuzhi Song, Jun-Liang Xing, Y. Liao, Chuanchuan Li, Ying-qiang Xu, Yun Xu, Guofeng Song, Zhichuan Niu

{"title":"2. MBE的生长与制备Xμm InGa(As)Sb/AlGaAsSb激光器","authors":"Yu Zhang, Yuzhi Song, Jun-Liang Xing, Y. Liao, Chuanchuan Li, Ying-qiang Xu, Yun Xu, Guofeng Song, Zhichuan Niu","doi":"10.1117/12.2071640","DOIUrl":null,"url":null,"abstract":"2.X μm InGa(As)Sb/AlGaAsSb compressively strained quantum wells laser has been grown and fabricated. Antimonide laser with 1.5mm*90μm without AR/HR emitted 550mW of continuous wave output power at 2μm.And 2.4μm laser without AR/HR output 195mW at room temperature.","PeriodicalId":164339,"journal":{"name":"Photonics Asia","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"MBE growth and fabrication of 2.Xμm InGa(As)Sb/AlGaAsSb laser\",\"authors\":\"Yu Zhang, Yuzhi Song, Jun-Liang Xing, Y. Liao, Chuanchuan Li, Ying-qiang Xu, Yun Xu, Guofeng Song, Zhichuan Niu\",\"doi\":\"10.1117/12.2071640\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"2.X μm InGa(As)Sb/AlGaAsSb compressively strained quantum wells laser has been grown and fabricated. Antimonide laser with 1.5mm*90μm without AR/HR emitted 550mW of continuous wave output power at 2μm.And 2.4μm laser without AR/HR output 195mW at room temperature.\",\"PeriodicalId\":164339,\"journal\":{\"name\":\"Photonics Asia\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Photonics Asia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2071640\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photonics Asia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2071640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

2.制备了X μm InGa(As)Sb/AlGaAsSb压缩应变量子阱激光器。1.5mm*90μm无AR/HR的锑化物激光器在2μm波长下连续输出功率为550mW。2.4μm无AR/HR激光器，室温输出195mW。

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MBE growth and fabrication of 2.Xμm InGa(As)Sb/AlGaAsSb laser

2.X μm InGa(As)Sb/AlGaAsSb compressively strained quantum wells laser has been grown and fabricated. Antimonide laser with 1.5mm*90μm without AR/HR emitted 550mW of continuous wave output power at 2μm.And 2.4μm laser without AR/HR output 195mW at room temperature.

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Photonics Asia

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