{"title":"高功率GTOs的硬盘驱动器:通过改进栅极单元获得更好的开关能力","authors":"H. Gruening, A. Zuckerberger","doi":"10.1109/IAS.1996.559263","DOIUrl":null,"url":null,"abstract":"The paper presents the dynamic behavior of a standard high power GTO (CSG 3003-45) during turn-on and off switching transients under hard drive conditions. The high power switching device and its gate-unit were modeled and simulated in Spice and ABBPisces (2D device and circuit simulator) and their performances were predicted. A gate-unit capable to handle up to |dI/sub G//dt|=5 kA//spl mu/s was realized and tremendous betterment of device original specifications (as per data-sheet supplied from the producer) were observed during measurements. Very good agreement between simulation and laboratory findings were notified during turn-on and turn-off transients. This is a good indication of homogeneous operation of all 2000 parallel cells of the segmented GTO.","PeriodicalId":177291,"journal":{"name":"IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"47","resultStr":"{\"title\":\"Hard drive of high power GTOs: better switching capability obtained through improved gate-units\",\"authors\":\"H. Gruening, A. Zuckerberger\",\"doi\":\"10.1109/IAS.1996.559263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the dynamic behavior of a standard high power GTO (CSG 3003-45) during turn-on and off switching transients under hard drive conditions. The high power switching device and its gate-unit were modeled and simulated in Spice and ABBPisces (2D device and circuit simulator) and their performances were predicted. A gate-unit capable to handle up to |dI/sub G//dt|=5 kA//spl mu/s was realized and tremendous betterment of device original specifications (as per data-sheet supplied from the producer) were observed during measurements. Very good agreement between simulation and laboratory findings were notified during turn-on and turn-off transients. This is a good indication of homogeneous operation of all 2000 parallel cells of the segmented GTO.\",\"PeriodicalId\":177291,\"journal\":{\"name\":\"IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"47\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.1996.559263\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1996.559263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hard drive of high power GTOs: better switching capability obtained through improved gate-units
The paper presents the dynamic behavior of a standard high power GTO (CSG 3003-45) during turn-on and off switching transients under hard drive conditions. The high power switching device and its gate-unit were modeled and simulated in Spice and ABBPisces (2D device and circuit simulator) and their performances were predicted. A gate-unit capable to handle up to |dI/sub G//dt|=5 kA//spl mu/s was realized and tremendous betterment of device original specifications (as per data-sheet supplied from the producer) were observed during measurements. Very good agreement between simulation and laboratory findings were notified during turn-on and turn-off transients. This is a good indication of homogeneous operation of all 2000 parallel cells of the segmented GTO.