基于脉冲周期反向电镀和光敏树脂的封装工艺多层5-/spl μ /m厚铜布线技术

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219750

K. Kikuchi, M. Takamiya, Y. Kudoh, K. Soejima, H. Honda, M. Mizuno, S. Yamamichi

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引用次数: 6

摘要

针对高速ulsi中的低阻电源布线，开发了一种面向封装工艺的5-/spl μ /m厚多层铜布线技术。采用脉冲周期反电镀法制备的粗铜线，无需CMP工艺，厚度均匀性好。作为层间介质的光敏树脂消除了干蚀刻步骤。在0.13-/spl mu/m的CMOS ULSI上成功地制造了三层厚的Cu线和三层0.5 /spl mu/m厚的Al线。与常规两层0.5-/spl mu/m厚的铝导线相比，铜导线总电阻减小了5倍。这种简单的技术适用于未来的低成本ULSI全球布线。

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A package-process-oriented multilevel 5-/spl mu/m-thick Cu wiring technology with pulse periodic reverse electroplating and photosensitive resin

A package-process-oriented multilevel 5-/spl mu/m-thick Cu wiring technology has been developed for low resistance power supply wirings in high-speed ULSIs. A thick Cu wiring fabricated by pulse periodic reverse electroplating achieves the good thickness uniformity without CMP process. A photosensitive resin as interlayer dielectric eliminates dry etching steps. Three layers of thick Cu wirings have been successfully fabricated on the top of a 0.13-/spl mu/m CMOS ULSI with three layers of 0.5 /spl mu/m-thick Al wiring. The total thick Cu wiring resistance is confirmed to be five times as small as that of the conventional two layers of 0.5-/spl mu/m-thick Al wirings. This simple technology is suitable for future low-cost ULSI global wirings.

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来源期刊

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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