用于卫星通信的40纳米CMOS v波段功率放大器

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2022-10-28 DOI:10.1109/ICTA56932.2022.9963077

Hengzhi Wan, Dixian Zhao

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引用次数: 1

摘要

介绍了一种两级v波段功率放大器。每级由一个中和的共源放大器对组成，通过变压器相互耦合。采用40纳米CMOS技术实现的两级放大器在47 GHz时实现了16.8 dB的测量小信号增益，3db带宽超过6.5 GHz。最大1 db压缩输出功率(P1dB)为12.2 dBm，在47 GHz测量时P1dB (PAE1dB)的功率附加效率为18%;从45到51 GHz，在1.1 v电源电压下，测量到的p1dbm大于10 dBm。

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A V-band Power Amplifier for Satellite Communications in 40-nm CMOS

This paper presents a V-band power amplifier (PA) with two stages. Each stage consists of a neutralized common-source amplifier pair, coupled with each other using a transformer. Implemented in 40-nm CMOS technology, the proposed two-stage PA achieves a measured small-signal gain of 16.8 dB at 47 GHz with a 3-dB bandwidth more than 6.5 GHz. The maximum 1-dB compressed output power (P1dB) is 12.2 dBm with a power-added efficiency at P1dB (PAE1dB) of 18% measured at 47 GHz; from 45 to 51 GHz, the measured P1dBis above 10 dBm under a 1.1-V supply voltage.

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2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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