polysige MEMS压力传感器的快速分析设计

V. Rochus, B. Wang, A. R. Chaudhuri, P. Hélin, S. Severi, X. Rottenberg
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引用次数: 4

摘要

本文提出了一种基于圆形Kirchhoff-Love板理论的Poly-SiGe MEMS压力传感器的快速设计策略。基础分析模型允许对传感器的灵敏度进行快速和准确的评估,这对于改进其设计至关重要。通过将新模型的预测结果与计算成本更高的模拟技术(高阶参数单元和三维有限元模型)以及使用imec开发的Poly-SiGe平台制作的300μm膜的实验测量结果进行比较,证明了新模型的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fast analytical design of Poly-SiGe MEMS pressure sensors
This paper presents a fast design strategy for Poly-SiGe MEMS pressure sensors, based on circular Kirchhoff-Love plate theory. The underlying analytical model allows for a rapid and accurate evaluation of the sensitivity of the sensors, crucial for improving their design. The accuracy of the new model is demonstrated by comparing its predictions with more computationally expensive simulation techniques (high-order parametric element and three-dimensional finite element models) and with experimental measurements performed on a 300μm membrane fabricated using the Poly-SiGe platform developed at imec.
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