S. Pantelides, M. Ramamoorthy, A. Maiti, M. Chisholm, S. Pennycook
{"title":"硅中复杂杂质动力学","authors":"S. Pantelides, M. Ramamoorthy, A. Maiti, M. Chisholm, S. Pennycook","doi":"10.1109/SMICND.1996.557300","DOIUrl":null,"url":null,"abstract":"We review results of recent first-principles calculations that have led to comprehensive descriptions of a wide range of dynamical properties of impurities in Si. In particular we review the dynamics of clustering and declustering of As impurities in heavily-doped crystalline Si, the segregation of As impurities in the form of ordered chains in grain boundaries, and the very complex though seemingly simple migration of oxygen impurities in Si.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Complex impurity dynamics in silicon\",\"authors\":\"S. Pantelides, M. Ramamoorthy, A. Maiti, M. Chisholm, S. Pennycook\",\"doi\":\"10.1109/SMICND.1996.557300\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We review results of recent first-principles calculations that have led to comprehensive descriptions of a wide range of dynamical properties of impurities in Si. In particular we review the dynamics of clustering and declustering of As impurities in heavily-doped crystalline Si, the segregation of As impurities in the form of ordered chains in grain boundaries, and the very complex though seemingly simple migration of oxygen impurities in Si.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557300\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557300","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We review results of recent first-principles calculations that have led to comprehensive descriptions of a wide range of dynamical properties of impurities in Si. In particular we review the dynamics of clustering and declustering of As impurities in heavily-doped crystalline Si, the segregation of As impurities in the form of ordered chains in grain boundaries, and the very complex though seemingly simple migration of oxygen impurities in Si.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
