控制低漏1.6 nm栅极-硅基sio /sub 2/密度，用于高性能和高可靠的n/ pfet

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934957

M. Togo, K. Watanabe, M. Terai, S. Kimura, A. Morioka, T. Yamamoto, T. Tatsumi, T. Mogami

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引用次数: 7

摘要

我们报道了高密度基极sio /sub 2/对于氮化的重要性，并展示了使用自由基工艺在n/ pfet中低泄漏和高可靠的1.6 nm栅极sio，而不会导致性能下降。结果表明，高密度的1.6 nm SiO/sub - 2/比低密度SiO/sub - 2/在n/ pfet中的可靠性高10倍，并且由于它保持了SiO/sub - 2/的表面氮化和理想的si / si衬底界面，适合作为自由基氮化的基材层。采用高密度基极SiO/sub 2/的1.6 nm硅硅硅基晶体管在n/ pfet中具有相当的可驱动性，并且在nfet中具有1.5个数量级的栅极泄漏，在pfet中具有1个数量级的栅极泄漏，并且在n/ pfet中具有比1.6 nm硅硅硅基/sub 2/高10倍的可靠性。

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Controlling base-SiO/sub 2/ density of low-leakage 1.6 nm gate-SiON for high-performance and highly reliable n/pFETs

We report the importance of high-density base-SiO/sub 2/ for nitridation, and demonstrate a low-leakage and highly reliable 1.6 nm gate-SiON without performance degradation in n/pFETs using a radical process. It was found that the high-density 1.6 nm SiO/sub 2/ is ten times more reliable than low-density SiO/sub 2/ in n/pFETs and is suitable as a base layer for radical nitridation as it maintains the surface nitridation of the SiO/sub 2/ and the ideal SiON/Si-substrate interface. The 1.6 nm SiON with the high-density base-SiO/sub 2/ produces comparable drivability in n/pFETs, and has one and half orders of magnitude less gate leakage in nFETs, one order of magnitude less gate leakage in pFETs, and ten times more reliability in n/pFETs than the 1.6 nm SiO/sub 2/.

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2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

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